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arXiv · 2010.14502

Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes

Aleksandr Afonenko·Dmitry Ushakov·Georgy Alymov·Aleksandr Dubinov·Sergey Morozov·Vladimir Gavrilenko·Dmitry Svintsov
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Abstract

Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $\lambda = 26...30$ $\mu$m at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses.

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Aleksandr Afonenko, Dmitry Ushakov, Georgy Alymov, Aleksandr Dubinov, Sergey Morozov, Vladimir Gavrilenko, Dmitry Svintsov. 2020-10-27. Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes. https://doi.org/10.1088/1361-6463%2Fabe07e

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