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arXiv · 2012.02425

Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$

Hiroshi Takatsu·Naoya Yamashina·Daisuke Shiga·Ryu Yukawa·Koji Horiba·Hiroshi Kumigashira·Takahito Terashima·Hiroshi Kageyama
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Abstract

SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO$_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO$_3$ or KTaO$_3$ substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO$_3$ film is also verified by angle-resolved photoemission spectroscopy (ARPES) measurements showing clear Fermi surfaces.

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Hiroshi Takatsu, Naoya Yamashina, Daisuke Shiga, Ryu Yukawa, Koji Horiba, Hiroshi Kumigashira, Takahito Terashima, Hiroshi Kageyama. 2020-12-04. Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$. https://doi.org/10.1016/j.jcrysgro.2020.125685

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