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arXiv · 2012.06640

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

Yuanjie Chen·Shaoyun Huang·Dong Pan·Jianhong Xue·Li Zhang·Jianhua Zhao·H. Q. Xu
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Abstract

A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.

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Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, H. Q. Xu. 2020-12-11. Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet. https://doi.org/10.1038/s41699-020-00184-y

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