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arXiv · 2012.07588

Stress-controlled zero-field spin splitting in silicon carbide

I. D. Breev·A. V. Poshakinskiy·V. V. Yakovleva·S. S. Nagalyuk·E. N. Mokhov·R. Hübner·G. V. Astakhov·P. G. Baranov·A. N. Anisimov
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Abstract

We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.

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I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva, S. S. Nagalyuk, E. N. Mokhov, R. Hübner, G. V. Astakhov, P. G. Baranov, A. N. Anisimov. 2020-12-08. Stress-controlled zero-field spin splitting in silicon carbide. https://doi.org/10.1063/5.0040936

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