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arXiv · 2101.01790

Current Switching of Valley Polarization in Twisted Bilayer Graphene

Xuzhe Ying·Mengxing Ye·Leon Balents
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Abstract

Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moir\'e bands with opposite Chern number [Science 367, 900 (2020), Science 365, 605 (2019)]. It was observed that a small DC current is able to switch the valley polarization and reverse the sign of the Hall conductance [Science 367, 900 (2020), Science 365, 605 (2019)]. Here, we discuss the mechanism of the current switching of valley polarization near the transition temperature, where bulk dissipative transport dominates. We show that for a sample with rotational symmetry breaking, a DC current may generate an electron density difference between the two valleys (valley density difference). The current induced valley density difference in turn induces a first order transition in the valley polarization. We emphasize that the inter-valley scattering plays a central role since it is the channel for exchanging electrons between the two valleys. We further estimate the valley density difference in the TBG/h-BN system with a microscopic model, and find a significant enhancement of the effect in the magic angle regime.

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Xuzhe Ying, Mengxing Ye, Leon Balents. 2021-01-05. Current Switching of Valley Polarization in Twisted Bilayer Graphene. https://doi.org/10.1103/physrevb.103.115436

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