SearcharxivSearch

arXiv · 2101.03066

Stability, Evolution and Switching of Ferroelectric Domain Structures in Lead-free BaZr$_{0.2}$Ti$_{0.8}$O$_3$-Ba$_{0.7}$Ca$_{0.3}$TiO$_3$ System: Thermodynamic Analysis and Phase-field Simulations

Abstract

Enhanced room-temperature electromechanical coupling in the lead-free ferroelectric system $(1-x)$BaZr$_{0.2}$Ti$_{0.8}$O$_{3}$ - $x$Ba$_{0.7}$Ca$_{0.3}$TiO$_{3}$ (abbreviated as BZCT) at $x=0.5$ is attributed to the existence of a morphotropic phase region (MPR) containing an intermediate orthorhombic ($O$) phase between terminal rhombohedral ($R$) BZT and tetragonal ($T$) BCT phases. However, there is ambiguity regarding the morphotropic phase transition in BZCT at room temperature - while some experiments suggest a single $O$ phase within the MPR, others indicate coexistence of three polar phases ($T+R+O$). Therefore, to understand the thermodynamic stability of polar phases and its relation to electromechanical switching during morphotropic phase transition in BZCT, we develop a Landau potential based on the theory of polar anisotropy. Since intrinsic electrostrictive anisotropy changes as a function of electromechanical processing, we establish a correlation between the parameters of our potential and the coefficients of electrostriction. We also conducted phase-field simulations based on this potential to demonstrate changes in domain configuration from single-phase $O$ to three-phase $T+R+O$ at the equimolar composition with the increase in electrostrictive anisotropy. Diffusionless phase diagrams and the corresponding piezoelectric coefficients obtained from our model compare well with the experimental findings. Increase in electrostrictive anisotropy increases the degeneracy of the free energy at ambient temperature and pressure leading to decreasing polar anisotropy, although there is an accompanying increase in the electromechanical anisotropy manifested by an increase in the difference between effective longitudinal and transverse piezo-coefficients, $d_{33}$ and $d_{31}$.

Explore related subjects

Keep this discovery

BibTeXRIS

Soumya Bandyopadhyay, Tushar Jogi, Ranjith Ramadurai, Saswata Bhattacharya. 2021-01-08. Stability, Evolution and Switching of Ferroelectric Domain Structures in Lead-free BaZr$_{0.2}$Ti$_{0.8}$O$_3$-Ba$_{0.7}$Ca$_{0.3}$TiO$_3$ System: Thermodynamic Analysis and Phase-field Simulations. https://arxiv.org/abs/2101.03066

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci