Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

Hao Zhang; Michiel W. A. de Moor; Jouri D. S. Bommer; Di Xu; Guanzhong Wang; Nick van Loo; Chun-Xiao Liu; Sasa Gazibegovic; John A. Logan; Diana Car; Roy L. M. Op het Veld; Petrus J. van Veldhoven; Sebastian Koelling; Marcel A. Verheijen; Mihir Pendharkar; Daniel J. Pennachio; Borzoyeh Shojaei; Joon Sue Lee; Chris J. Palmstrøm; Erik P. A. M. Bakkers; S. Das Sarma; Leo P. Kouwenhoven

arXiv · 2101.11456

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

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Abstract

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.

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Hao Zhang, Michiel W. A. de Moor, Jouri D. S. Bommer, Di Xu, Guanzhong Wang, Nick van Loo, Chun-Xiao Liu, Sasa Gazibegovic, John A. Logan, Diana Car, Roy L. M. Op het Veld, Petrus J. van Veldhoven, Sebastian Koelling, Marcel A. Verheijen, Mihir Pendharkar, Daniel J. Pennachio, Borzoyeh Shojaei, Joon Sue Lee, Chris J. Palmstrøm, Erik P. A. M. Bakkers, S. Das Sarma, Leo P. Kouwenhoven. 2021-01-27. Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices. https://arxiv.org/abs/2101.11456

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