Semiconductor materials stacks for quantum dot spin qubits

Giordano Scappucci

doi:10.1557/s43577-021-00147-8

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arXiv · 2102.10897

Semiconductor materials stacks for quantum dot spin qubits

Giordano Scappucci

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Abstract

In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disorder from electrical transport. This brief note is far from being exhaustive and should be considered a first introduction to the materials challenges and opportunities towards a larger spin qubit quantum processor.

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Giordano Scappucci. 2021-02-22. Semiconductor materials stacks for quantum dot spin qubits. https://doi.org/10.1557/s43577-021-00147-8

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