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arXiv · 2103.00096

On the Performance of Dual-Gate Reconfigurable Nanowire Transistors

Bin Sun·Benjamin Richstein·Patrick Liebisch·Thorben Frahm·Stefan Scholz·Jens Trommer·Thomas Mikolajick·Joachim Knoch
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Abstract

We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configuration ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky-barrier. Operating the RFET in PGAS configuration yields a switching behavior close to a conventional MOSFET. This, howewer, needs to be traded off against strongly non-linear output characteristics for small bias.

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Bin Sun, Benjamin Richstein, Patrick Liebisch, Thorben Frahm, Stefan Scholz, Jens Trommer, Thomas Mikolajick, Joachim Knoch. 2021-02-27. On the Performance of Dual-Gate Reconfigurable Nanowire Transistors. https://doi.org/10.1109/ted.2021.3081527

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