SearcharxivSearch

arXiv · 2103.06065

Na9Bi5Os3O24: A Unique Diamagnetic Oxide Featuring a Pronouncedly Jahn-Teller Compressed Octahedral Coordination of Osmium(VI)

Abstract

The Jahn-Teller theorem constitutes one of the most popular and stringent concepts, applicable to all fields of chemistry. In open shell transition elements chemistry and physics, 3d4, 3d9, and 3d7(low-spin) configurations in octahedral complexes serve as particular illustrative and firm examples, where a striking change (distortion) in local geometry is associated to a substantial reduction of electronic energy. However, there has been a lasting debate, about the fact that the octahedra are found to exclusively elongate, (at least for eg electrons). Against this background, the title compound displays two marked features, (1) the octahedron of oxygen atoms around Os6+ (d2) is drastically compressed, in contrast to the standard JT expectations, and (2) the splitting of the t2g set induced by this compression is extreme, such that a diamagnetic ground state results. What we see is obviously a Jahn-Teller distortion resulting in a compression of the respective octahedron and acting on the t2g set of orbitals. Both these issues are unprecedented. Noteworthy, the splitting into a lower dxy (hosting two d electrons with opposite spin) and two higher dxz and dyz orbitals is so large that for the first time ever the Hund's coupling for t2g electrons is overcome. We show that these effects are not forced by structural frustration, the structure offers sufficient space for Os to shift the apical oxygen atoms to a standard distance. Local electronic effects appear to be responsible, instead. The relevance of these findings is far reaching, since they provide insights in the hierarchy of perturbations defining ground states of open shell electronic systems. The system studied here, offers substantially more structural and compositional degrees of freedom, such that a configuration could form that enables Os6+ to adopt its apparently genuine diamagnetic ground state.

Explore related subjects

Keep this discovery

BibTeXRIS

Gohil S. Thakur, Hans Reuter, Alexey V. Ushakov, Gianpiero Gallo, Jueurgen Nuss, Robert E. Dinnebier, Sergey V. Streltsov, Daniel I. Khomskii, Martin Jansen. 2021-03-10. Na9Bi5Os3O24: A Unique Diamagnetic Oxide Featuring a Pronouncedly Jahn-Teller Compressed Octahedral Coordination of Osmium(VI). https://doi.org/10.1002/anie.202103295

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci