Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 2104.03175

Counterdiffusion-in-gel growth of high optical and crystal quality MAPbX3 (MA = CH3NH3+, X = I-, Br-) lead-halide perovskite single crystals

Nikita I. Selivanov·Aleksei O. Murzin·Vsevolod I. Yudin·Yury V. Kapitonov·Alexei V. Emeline
View original source ↗Read source document ↗Export metadata ↓

Abstract

Halide perovskites are promising semiconductor materials for optoelectronics. One of their unique features is the synthesis, that could be performed by the crystallization from the solution. This method is fast, but practically couldn't be optimized due to the strongly non-equilibrium conditions of crystal growth. Another quality limitation is the typical incorporation of organic solvent molecules into crystals when perovskite crystallization is performed from solution with organic solvent. Here we report an alternative method of perovskite single crystal growth based on the counterdiffusion of reagents in the gel medium. This counterdiffusion-in-gel crystallization (CGC) method is based on the difference of solubility between perovskites and lead halide in the corresponding halide acid, HX. The difference of solubility between perovskites and lead halide leads to the formation of perovskite single crystals of sufficiently large size with an excellent optical quality at constant room temperature. Particularly, here we report the growth of MAPbI3 and MAPbBr3 halide perovskite single crystals (MA = CH3NH3+) by the counterdiffusion of the organic-solvent-free reagents in the U-tube filled with the silica gel. Their photoluminescence spectra recorded at 4 K demonstrate the excitonic resonances with the full width < 2.5 meV, which proves their excellent optical quality. The proposed method can be used in fabrication of high-quality halide perovskite single crystals for both fundamental research, and for applications where the absence of defects is a critical requirement.

Explore related subjects

cond-mat.mtrl-scicond-mat.mes-hall

Keep this discovery

BibTeXRIS

Nikita I. Selivanov, Aleksei O. Murzin, Vsevolod I. Yudin, Yury V. Kapitonov, Alexei V. Emeline. 2021-04-07. Counterdiffusion-in-gel growth of high optical and crystal quality MAPbX3 (MA = CH3NH3+, X = I-, Br-) lead-halide perovskite single crystals. https://arxiv.org/abs/2104.03175

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗