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arXiv · 2104.11281

Chemical bonding origin of the thermoelectric power factor in Half-Heusler semiconductors

Kasper Tolborg·Bo B. Iversen
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Abstract

Intermetallic semiconductors with the cubic Half-Heusler structure (XYZ) have excellent thermoelectric properties. This has been attributed to the high degeneracy of the carrier pockets in the band structure, but large differences are found between different material compositions. Half-Heuslers are often interpreted within Zintl chemistry, making a clear distinction between an electropositive cation ($X^{n+}$) and an extended polyanion ($YZ^{n-}$). Based on quantitative real space chemical bonding analysis, we unravel large degrees of covalent bonding between the formal cation and anion, making the Zintl distinction clearly invalid. This covalence is shown to strongly affect the band structure, thermoelectric properties and response properties in the materials, with improved thermoelectric properties observed for those materials that least follow the Zintl concept. This expands our knowledge of the chemical bonding motifs governing physical properties, and gives a critical view on the simplistic chemical concepts too often applied for design of complex materials.

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Kasper Tolborg, Bo B. Iversen. 2021-04-22. Chemical bonding origin of the thermoelectric power factor in Half-Heusler semiconductors. https://doi.org/10.1021/acs.chemmater.1c01409

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