Development of Interatomic Potentials to Model the Interfacial Heat Transport of Ge/GaAs

Abstract

Molecular dynamics simulations provide a versatile framework to study interfacial heat transport, but their accuracy remains limited by the accuracy of available interatomic potentials. In the past, researchers have adopted the use of analytic potentials and simple mixing rules to model interfacial systems, with minimal justification for their use. On the other hand, contemporary machine learned interatomic potentials have greater complexity, but have not seen rigorous validation of interfacial heat transport properties. Moreover, when fitting to ab initio data, it is not known whether interface systems small enough to be tractable for density functional theory calculations can produce reasonable interatomic force constants. These and related questions are studied herein using a model Ge/GaAs system, with a particular focus on the harmonic force constants (IFC2s) of the interface. The ab initio IFC2s are shown to recover near bulk-like values ~ 1-2 nm away from the interface, while also exhibiting a complex relationship across the interface that likely precludes any successful application of mixing rules. Two different spectral neighborhood analysis potentials (SNAP) are developed to model the interface. One is fit to the total forces, while the other is only used to describe the anharmonicity, with a Taylor expansion used to describe the harmonic portion of the potential. Each potential, along with their merits and issues are compared and discussed, which provides important insights for future work.