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arXiv · 2105.11753

In-situ tuned photoelectric properties of PtS$_2$ transistor

Yana Cui·Wentao Gong·Gang Zhao·Weike Wang
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Abstract

Strain engineering is a powerful and widely used strategy for boosting the performance of electronic and optoelectronic devices. Here, we demonstrate an approach to tune the photoelectric properties of Platinum sulfide (PtS$_2$) by using a ferroelectric substrate PMN-PT as the strain generator. It is found that both the drain current and responsivity of the PtS$_2$ photodetector is directly coupled to the electrostriction of PMN-PT, showing a high strain-tuned ratio $10^{3}$, high responsivity up to $6.3\times 10^{3}$ A/W and detectivity of $9.3\times 10^{12}$ Jones. Additionally, a high photogain $\approx 5\times 10^{5}$ is obtained at a gate voltage Vg = 15 V. Our results provide an effective method for manipulating electrical properties and optimizing performance of two dimensional layered (2D) materials based optoelectronic devices.

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Yana Cui, Wentao Gong, Gang Zhao, Weike Wang. 2021-05-25. In-situ tuned photoelectric properties of PtS$_2$ transistor. https://arxiv.org/abs/2105.11753

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