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arXiv · 2105.14765

Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer

Shaowen Xu·Fanhao Jia·Guodong Zhao·Wei Wu·Wei Ren
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Abstract

Two-dimensional (2D) multiferroics have been casted great attention owing to their promising prospects for miniaturized electronic and memory devices.Here, we proposed a highly stable 2D multiferroic, VOF monolayer, which is an intrinsic ferromagnetic half semiconductor with large spin polarization ~2 $\mu_{B}/V$ atom and a significant uniaxial magnetic anisotropy along a-axis (410 $\mu eV/V$ atom). Meanwhile, it shows excellent ferroelectricity with a large spontaneous polarization 32.7 $\mu C/cm^{2}$ and a moderate energy barrier (~43 meV/atom) between two ferroelectric states, which can be ascribed to the Jahn-Teller distortion.Moreover, VOF monolayer harbors an ultra-large negative Poisson's ratio in the in-plane direction (~-0.34). The Curie temperature evaluated from the Monte Carlo simulations based on the Ising model is about 215 K, which can be enhanced room temperature under -4% compressive biaxial strain.The combination of ferromagnetism and ferroelectricity in the VOF monolayer could provide a promising platform for future study of multiferroic effects and next-generation multifunctional nanoelectronic device applications.

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Shaowen Xu, Fanhao Jia, Guodong Zhao, Wei Wu, Wei Ren. 2021-05-31. Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer. https://doi.org/10.1039/d1tc02238e

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