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arXiv · 2106.04848

Stimulated emission of plasmon-LO mode in narrow gap HgTe/CdHgTe quantum wells

V. Ya. Aleshkin·A. A. Dubinov·V. I. Gavrilenko·F. Teppe
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Abstract

We calculate the dispersion of the plasmon-LO modes taking into account the spatial dispersion of the electronic polarizability. It is shown that stimulated emission of the plasmon-LO mode is possible in the frequency range corresponding to the Reststrahlen band of GaAs both in a 6 nm wide HgTe/CdTe QW and in a 5 nm wide HgTe/Cd0.7Hg0.3Te QW grown on the (013) plane. Due to the anisotropy of the dispersion law for the plasmon-LO mode, the [03-1] direction appears to be optimal for generation.

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V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, F. Teppe. 2021-06-09. Stimulated emission of plasmon-LO mode in narrow gap HgTe/CdHgTe quantum wells. https://doi.org/10.1088/2040-8986%2Fac253d

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