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arXiv · 2107.00104

Demonstration of the DC-Kerr Effect in Silicon-Rich Nitride

Alex Friedman·Hani Nejadriahi·Rajat Sharma·Yeshaiahu Fainman
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Abstract

We demonstrate the DC-Kerr effect in PECVD Silicon-rich Nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, \c{hi}^((3)), as high as (6 +/- 0.58)x10-19 m2/v2. We employ spectral shift versus applied voltage measurements in a racetrack ring resonator as a tool by which to characterize the nonlinear susceptibilities of these films. In doing so we demonstrate a \c{hi}^((3)) larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase-shifters while maintain a low thermal budget using a deposition technique readily available in CMOS process flows.

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Alex Friedman, Hani Nejadriahi, Rajat Sharma, Yeshaiahu Fainman. 2021-06-30. Demonstration of the DC-Kerr Effect in Silicon-Rich Nitride. https://doi.org/10.1364/ol.432359

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