arXiv · 2107.01652
A quantum bound on the 1/f noise in semiconductors with a conical energy-momentum dispersion
Abstract
The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of semiconductors with a conical energy-momentum dispersion of charge carriers. It possesses all characteristic properties of 1/f noise. Its momentum decomposition is found to be singular at zero particle momentum, a measurable consequence being a sharp peak in the noise magnitude at small charge carrier density. In application to monolayer graphene, this peak becomes M-shaped on account of a continuous transition from the electron to hole conductivity. A comparison with experimental data is made which demonstrates that the calculated power spectrum is close in magnitude and congruent to the observed.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Kirill A. Kazakov. 2021-07-04. A quantum bound on the 1/f noise in semiconductors with a conical energy-momentum dispersion. https://doi.org/10.1016/j.physleta.2021.127741
Cite the original work for its findings. Save a collection to share your selection of sources.