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arXiv · 2108.00778

Analysing digital in-memory computing for advanced finFET node

Veerendra S Devaraddi·Joycee M. Mekie
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Abstract

Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves accessing multiple SRAM cells simultaneously, which may result in a bit flip when not timed critically. Therefore we discuss the transient voltage characteristics of the bitlines during an SRAM compute. To improve the packaging density and also avoid MOSFET down-scaling issues, we use a 7-nm predictive PDK which uses a finFET node. The finFET process has discrete fins and a lower Voltage supply, which makes the design of in-memory compute SRAM difficult. In this paper, we design a 6T SRAM cell in 7-nm finFET node and compare its SNMs with a UMC 28nm node implementation. Further, we design and simulate the rest of the SRAM peripherals, and in-memory computation for an advanced finFET node.

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Veerendra S Devaraddi, Joycee M. Mekie. 2021-08-02. Analysing digital in-memory computing for advanced finFET node. https://arxiv.org/abs/2108.00778

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