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arXiv · 2108.09381

Nonreciprocal ENZ-Dielectric Bilayers: Enhancement of Nonreciprocity from a Nonlinear Transparent Conducting Oxide Thin Film at Epsilon-Near-Zero (ENZ) Frequency

Diego M. Solís·Nader Engheta
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Abstract

We envision the use of an indium tin oxide (ITO) thin film as part of a bi-layered silicon-photonics subwavelength device to boost nonlinearity-assisted all-passive nonreciprocal behavior. The asymmetric p-polarized oblique excitation of a mode near the epsilon-near-zero (ENZ) frequency, with highly-confined and enhanced normal electric field component and large absorption, allows to harness ITO's strong ultrafast nonlinear response for the generation of a notable nonreciprocal performance in the two-port element. Though limited by loss, we find the device's optimal operational point and the maximum nonreciprocal transmittance ratio attainable vs. light intensity -- including an apparent upper bound slightly over 2 --, and we perform exhaustive numerical simulations considering nonlinear processes of both anharmonic and thermal nature that validate our predictions, including steady-state and pulsed-laser excitations.

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Diego M. Solís, Nader Engheta. 2021-08-20. Nonreciprocal ENZ-Dielectric Bilayers: Enhancement of Nonreciprocity from a Nonlinear Transparent Conducting Oxide Thin Film at Epsilon-Near-Zero (ENZ) Frequency. https://doi.org/10.1103/physrevapplied.17.034053

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