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arXiv · 2109.12419

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Pankul Dhingra·Patrick Su·Brian D. Li·Ryan D. Hool·Aaron J. Muhowski·Mijung Kim·Daniel Wasserman·John Dallesasse·Minjoo Larry Lee
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Abstract

Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans from 400 nm to 11 {\mu}m with a crucial gap in the red-wavelength regime of 630-750 nm. Here, we demonstrate the first red InGaP QW and far-red InP QD lasers monolithically grown on CMOS compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of 550 A/cm2 and 690 A/cm2 with emission at 680-730 nm was achieved for QW and QD lasers on Si, respectively. This work takes the first vital step towards integration of visible red lasers on Si allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays.

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Pankul Dhingra, Patrick Su, Brian D. Li, Ryan D. Hool, Aaron J. Muhowski, Mijung Kim, Daniel Wasserman, John Dallesasse, Minjoo Larry Lee. 2021-09-25. Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001). https://arxiv.org/abs/2109.12419

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