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arXiv · 2110.01611

Anisotropic Hole Drift Velocity in 4H-SiC

Jackelinne L. Vasconcelos·Clóves Gonçalves Rodrigues·Roberto Luzzi
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Abstract

A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system. The hole drift velocity and the nonequilibrium temperature are obtained, and their dependence on the electric field strength is derived and analyzed.

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Jackelinne L. Vasconcelos, Clóves Gonçalves Rodrigues, Roberto Luzzi. 2021-10-02. Anisotropic Hole Drift Velocity in 4H-SiC. https://doi.org/10.1016/j.mseb.2019.114426

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