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arXiv · 2110.05581

Low-Voltage Magnetoelectric Coupling in Membrane Heterostructures

S. Lindemann·J. Irwin·G. -Y. Kim·B. Wang·K. Eom·J. J. Wang·J. M. Hu·L. Q. Chen·S. Y. Choi·C. B. Eom·M. S. Rzchowski
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Abstract

Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics, like (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates due to their giant piezoelectricity. But thin films of PMN-PT suffer from substrate clamping which substantially reduces piezoelectric in-plane strains. Here we present the first demonstration of low voltage ME coupling in an all-thin-film heterostructure which utilizes the anisotropic strains induced by the (011) orientation of PMN-PT. We completely remove PMN-PT films from their substrate and couple with FM Ni overlayers to create membrane PMN-PT/Ni heterostructures showing 90 degree Ni magnetization rotation with 3V PMN-PT bias, much less than the bulk PMNPT ~100V requirement. Scanning transmission electron microscopy and phase-field simulations clarify the membrane response. These results provide a crucial step towards understanding the microstructural behavior of PMN-PT thin films for use in piezo-driven magnetoelectric heterostructures.

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S. Lindemann, J. Irwin, G. -Y. Kim, B. Wang, K. Eom, J. J. Wang, J. M. Hu, L. Q. Chen, S. Y. Choi, C. B. Eom, M. S. Rzchowski. 2021-10-11. Low-Voltage Magnetoelectric Coupling in Membrane Heterostructures. https://arxiv.org/abs/2110.05581

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