High-mobility field-effect transistor using 2-dimensional electron gas at the LaScO3/BaSnO3 interface

Hyeongmin Cho; Dowon Song; Youjung Kim; Bongju Kim; Kookrin Char

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arXiv · 2110.05738

High-mobility field-effect transistor using 2-dimensional electron gas at the LaScO3/BaSnO3 interface

Hyeongmin Cho·Dowon Song·Youjung Kim·Bongju Kim·Kookrin Char

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Abstract

A novel 2-dimensional electron gas (2DEG) system with high-mobility was discovered at the interface of two perovskite oxides, a polar orthorhombic perovskite LaScO3 (LSO) and a nonpolar cubic perovskite BaSnO3 (BSO). Upon depositing the LSO film on the BSO film, the conductance enhancement and the resulting 2DEG density (n2D) was measured. Comparing the results with the previously reported LaInO3/BaSnO3 (LIO/BSO) polar interface, we applied the interface polarization model to the LSO/BSO system, in which the polarization exists only over 4 pseudocubic unit cells in LSO from the interface and vanishes afterward like the LIO/BSO interface. Based on the calculations of the self-consistent Poisson-Schrodinger equations, the LSO thickness dependence of n2D of LSO/BSO heterointerface is consistent with this model. Furthermore, a single subband in the quantum well is predicted. Using the conductive interface and the LSO as a gate dielectric, a 2DEG transistor composed of only perovskite oxides with high field-effect mobility (uFE) close to 100 cm2 V-1 s-1 is demonstrated.

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Hyeongmin Cho, Dowon Song, Youjung Kim, Bongju Kim, Kookrin Char. 2021-10-12. High-mobility field-effect transistor using 2-dimensional electron gas at the LaScO3/BaSnO3 interface. https://arxiv.org/abs/2110.05738

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