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arXiv · 2110.15500

Layer-dependent pressure effect on electronic structures of 2D black phosphorus

Shenyang Huang·Yang Lu·Fanjie Wang·Yuchen Lei·Chaoyu Song·Jiasheng Zhang·Qiaoxia Xing·Chong Wang·Yuangang Xie·Lei Mu·Guowei Zhang·Hao Yan·Bin Chen·Hugen Yan
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Abstract

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer-dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ~1.8 GPa, the bandgap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.

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Shenyang Huang, Yang Lu, Fanjie Wang, Yuchen Lei, Chaoyu Song, Jiasheng Zhang, Qiaoxia Xing, Chong Wang, Yuangang Xie, Lei Mu, Guowei Zhang, Hao Yan, Bin Chen, Hugen Yan. 2021-10-29. Layer-dependent pressure effect on electronic structures of 2D black phosphorus. https://doi.org/10.1103/physrevlett.127.186401

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