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arXiv · 2111.02739

Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains

I. V. Altukhov·S. E. Dizhur·M. S. Kagan·N. A. Khvalkovskiy·S. K. Paprotskiy·I. S. Vasil'evskii·A. N. Vinichenko
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Abstract

The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did not observe. The phenomenon is referred to strong carrier depletion inside the triangular high-field domain. The domain modes transformations under the illumination were also found.

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I. V. Altukhov, S. E. Dizhur, M. S. Kagan, N. A. Khvalkovskiy, S. K. Paprotskiy, I. S. Vasil'evskii, A. N. Vinichenko. 2021-11-04. Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains. https://doi.org/10.1134/s1064226921440017

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