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arXiv · 2111.05994

Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires

Lu Luo·Simone Assali·Mahmoud R. M. Atalla·Sebastian Koelling·Anis Attiaoui·Gérard Daligou·Sara Martí·J. Arbiol·Oussama Moutanabbir
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Abstract

Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core-shell nanowire heterostructures to implement highly responsive, room-temperature short-wave infrared nanoscale photodetectors. Atomic-level studies confirm the uniform shell composition and its higher crystallinity with respect to thin films counterparts. The demonstrated Ge/Ge0.92Sn0.08 p-type field-effect nanowire transistors exhibit superior optoelectronic properties achieving simultaneously a relatively high mobility, a high ON/OFF ratio, and a high responsivity, in addition to a broadband absorption in the short-wave infrared range. Indeed, the reduced bandgap of the Ge0.92Sn0.08 shell yields an extended cutoff wavelength of 2.1 um, with a room-temperature responsivity reaching 2.7 A/W at 1550 nm. These results highlight the potential of Ge/Ge1-xSnx core/shell nanowires as silicon-compatible building blocks for nanoscale integrated infrared photonics.

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Lu Luo, Simone Assali, Mahmoud R. M. Atalla, Sebastian Koelling, Anis Attiaoui, Gérard Daligou, Sara Martí, J. Arbiol, Oussama Moutanabbir. 2021-11-11. Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires. https://doi.org/10.1021/acsphotonics.1c01728

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