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arXiv · 2111.07296

Current controlled non-hysteresis magnetic switching in the ansence of magnetic field

Yanru Li·Meiyin Yang·Guoqiang Yu·Baoshan Cui·Jun Luo
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Abstract

By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven N\'eel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven N\'eel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting.

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Yanru Li, Meiyin Yang, Guoqiang Yu, Baoshan Cui, Jun Luo. 2021-11-14. Current controlled non-hysteresis magnetic switching in the ansence of magnetic field. https://doi.org/10.1063/5.0078514

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