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arXiv · 2111.11833

Field-Free Deterministic Writing of SOT-MTJ by Unipolar Current

Tengzhi Yang·Meiyin Yang·Lei Zhao·Jianfeng Gao·Qingyi Xiang·Wenjing Li·Feilong Luo·Li Ye·Jun Luo
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Abstract

We propose a manufacturable solution for field-free writing of perpendicular SOT-MTJ without sacrificing integration density on a 200 mm wafer. The field-free writing operation can be achieved by unipolar current pulses via engineering the interlayer exchange coupling in SOT-MTJ thin films. The proposed device can reach a high writing speed of up to 1 ns and work properly at temperature of 100 C. The deterministic writing of SOT-MTJ by unipolar current offers an effective approach for high density SOT-MRAM integration.

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Tengzhi Yang, Meiyin Yang, Lei Zhao, Jianfeng Gao, Qingyi Xiang, Wenjing Li, Feilong Luo, Li Ye, Jun Luo. 2021-11-23. Field-Free Deterministic Writing of SOT-MTJ by Unipolar Current. https://arxiv.org/abs/2111.11833

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