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arXiv · 2112.00924

Dirac-Source Diode with Sub-unity Ideality Factor

Gyuho Myeong·Wongil Shin·Seungho Kim·Hongsik Lim·Boram Kim·Taehyeok Jin·Kyunghwan Sung·Jihoon Park·Michael S. Fuhrer·Kenji Watanabe·Takashi Taniguchi·Fei Liu·Sungjae Cho
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Abstract

An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n<1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (100000). The realisation of a DS Schottky diode paves the way for the development of low-power electronic circuits.

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Gyuho Myeong, Wongil Shin, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Kyunghwan Sung, Jihoon Park, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu, Sungjae Cho. 2021-12-02. Dirac-Source Diode with Sub-unity Ideality Factor. https://doi.org/10.1038/s41467-022-31849-5

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