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arXiv · 2112.13056

The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces

V. Bruevich·L. Kasaei·S. Rangan·H. Hijazi·Z. Zhang·T. Emge·E. Andrei·R. A. Bartynski·L. C. Feldman·V. Podzorov
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Abstract

Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs based on epitaxial, single crystalline thin films of cesium lead bromide (CsPbBr3). An improved vapor-phase epitaxy has allowed growing truly large-area, atomically flat films of this perovskite with excellent structural and surface properties. FETs based on these CsPbBr3 films exhibit textbook transistor characteristics, with a very low hysteresis and high intrinsic charge carrier mobility. Availability of such high-performance devices has allowed the study of Hall effect in perovskite FETs for the first time. Our magneto-transport measurements show that the charge carrier mobility of CsPbBr3 FETs increases on cooling, from ~ 30 cm2V-1s-1 at room temperature, to ~ 250 cm2V-1s-1 at 50 K, exhibiting a band transport mostly limited by phonon scattering. The epitaxial growth and FET fabrication methodologies described here can be naturally extended to other perovskites, including the hybrid ones, thus representing a technological leap forward, overcoming the performance bottleneck in research on perovskite FETs.

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V. Bruevich, L. Kasaei, S. Rangan, H. Hijazi, Z. Zhang, T. Emge, E. Andrei, R. A. Bartynski, L. C. Feldman, V. Podzorov. 2021-12-24. The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces. https://arxiv.org/abs/2112.13056

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