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arXiv · 2201.05288

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Michael S. Fuhrer·Mark T. Edmonds·Dimitrie Culcer·Muhammad Nadeem·Xiaolin Wang·Nikhil Medhekar·Yuefeng Yin·Jared H Cole
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Abstract

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

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Michael S. Fuhrer, Mark T. Edmonds, Dimitrie Culcer, Muhammad Nadeem, Xiaolin Wang, Nikhil Medhekar, Yuefeng Yin, Jared H Cole. 2022-01-14. Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor. https://doi.org/10.1109/iedm19574.2021.9720587

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