Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain

Roberto da Silva; Gilson Wirth

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arXiv · 2201.10659

Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain

Roberto da Silva·Gilson Wirth

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Abstract

We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case of a dominant trap and universal behaviors for the superposition from many traps. We present detailed closed-form expressions corroborated by MC simulations. We are sure to have an important tool to guide developers in building and analyzing low-frequency noise in semiconductor devices.

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Roberto da Silva, Gilson Wirth. 2022-01-25. Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain. https://arxiv.org/abs/2201.10659

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