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arXiv · 2201.10824

High precision scalable power converter for accelerator magnets

Krister Leonart Haugen·Konstantinos Papastergiou·Panagiotis Asimakopoulos·Dimosthenis Peftitsis
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Abstract

The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing Silicon insulated gate bipolar transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9ppm) supplying a 0.05H electromagnetic load, aiming to achieve the accuracy without the use of active filters, by using SiC MOSFETs and a scalable module-based converter design.

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Krister Leonart Haugen, Konstantinos Papastergiou, Panagiotis Asimakopoulos, Dimosthenis Peftitsis. 2022-01-26. High precision scalable power converter for accelerator magnets. https://arxiv.org/abs/2201.10824

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