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arXiv · 2201.11900

Oxygen Deficient {\alpha}-MoO3 with Promoted Adsorption and State-Quenching of H2O for Gas Sensor: A DFT Study

Changmeng Huan·Pu Wang·Binghan He·Yongqing Cai·Qingqing Ke
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Abstract

Semiconducting oxides with reducible cations are ideal platforms for various functional applications in nanoelectronics and catalysts. Here we report an ultrathin monolayer alpha-MoO3 where tunable electronic properties and different gas adsorbing behaviors upon introducing the oxygen vacancies (VO). The unique property of alpha-MoO3 is that it contains three different types of oxygen atoms occupying three Wyckoff sites that are absent in other low-dimensional oxides and provides rich electronic hybridized states. The presence of VO triggers intermediate state in the gap at ~0.59 eV below the conduction band minimum and reduces the work function dramatically, together with new excitations at near infrared. The realigned Fermi level associated with the dangling state of VO reduces the neighboring Mo atoms and affects the gas adsorption thereafter. The binding energy of H2O molecules above VO is 2.5 times up to -0.75 eV compared with that of perfect lattice site and trends of transfer of electrons also reverse. The latter is related with the shallow localized state in the band gap due to H2O adsorbed above perfect MoO3 which becomes quenched upon adsorbing at the VO site. Those rich in-gap defective states in oxygen deficient MoO3, broadening the light absorption and promoting the uptake of water, are conductive to the application of alpha-MoO3 for optoelectronics, photothermal therapy, and sensor of moisture.

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Changmeng Huan, Pu Wang, Binghan He, Yongqing Cai, Qingqing Ke. 2022-01-28. Oxygen Deficient {\alpha}-MoO3 with Promoted Adsorption and State-Quenching of H2O for Gas Sensor: A DFT Study. https://doi.org/10.1039/d1tc05150d

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