arXiv · 2202.03781
Coexistence of different pinning mechanisms in Bi-2223 superconductor and its implications for using the material for high current applications
Abstract
We investigate the pinning mechanism in high-critical-current polycrystalline samples of Bi-2223 (Bi2Sr2Ca2Cu3O10) utilized in high current applications. Using differential magneto-optical (DMO) imaging technique, we track the magnetic field penetration in the sample. Our DMO imaging studies show circular regions with an average diameter of 20 um with dark contrast. We identify these as strong-pinning regions with a substantially higher local penetration field than the surrounding regions. A unique feature of these strong-pinning centers is that they survive upto high temperatures (near Tc) and produce a non-Gaussian distribution of the penetration field strength. By analysing the field dependence of the pinning force behaviour, we identify two distinct pinning mechanisms: at low temperatures, well below Tc, it is predominantly surface pinning mechanism and at higher temperatures near Tc, we see a crossover into a purely delTc pinning mechanism. Our studies show that surface pinning effects are related to grain alignment, grain boundary, and voids in the sample. The effect of these diminishes near Tc, and the strong-pinning regions here are related to local stoichiometric fluctuations. We investigate the impact of these pinning centers on the current distribution in a macroscopic Bi-2223 superconducting cylindrical tube. We map the current distribution across the macroscopic cylindrical tube using an array of hall sensors distributed around the cylinder. The map shows that the current distribution is non-uniform across the tube at high currents. The non-uniformity reveals an inhomogeneous distribution of strong-pinning centers across large length scales in superconductors used for applications.
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Md. Arif Ali, S. S. Banerjee. 2022-02-08. Coexistence of different pinning mechanisms in Bi-2223 superconductor and its implications for using the material for high current applications. https://doi.org/10.1063/5.0093741
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