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arXiv · 2202.06754

Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

S. G. Bishop·J. P. Hadden·R. Hekmati·J. K. Cannon·W. W. Langbein·A. J. Bennett
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Abstract

Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate, emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of $4.3\pm0.1$, whilst improving the lateral resolution by a factor equal to the refractive index of the lens.

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S. G. Bishop, J. P. Hadden, R. Hekmati, J. K. Cannon, W. W. Langbein, A. J. Bennett. 2022-02-14. Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens. https://doi.org/10.1063/5.0085257

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