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arXiv · 2202.11179

Transient Characteristics of $\beta$-Ga$_2$O$_3$ Nanomembrane Schottky Barrier Diodes on Various Substrates

Junyu Lai·Jung-Hun Seo
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Abstract

In this paper, a transient delayed rising and fall time of $\beta$-Ga$_2$O$_3$ NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under a different temperature condition. The devices exhibited noticeably less-delayed turn-on-/off- the transient time when $\beta$-Ga$_2$O$_3$ NMs SBDs were transfer-printed on a high-k substrate. Furthermore, a relationship between the $\beta$-Ga$_2$O$_3$ NM thicknesses and their transient characteristics were systematically investigated and found that phonon scattering plays an important role in heat dissipation as the thickness of $\beta$-Ga$_2$O$_3$ NMs get thinner which is also verified by the Multiphysics simulator. Overall, our result reveals the impact of various substrates with different thermal properties and different \b{eta}- Ga2O3 NMs thickness with the performance of $\beta$-Ga$_2$O$_3$ NMs based devices. Hence, these results can guide further efforts us to optimize the performance of future $\beta$-Ga$_2$O$_3$ devices by maximizing heat dissipation from the $\beta$-Ga$_2$O$_3$ layer.

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Junyu Lai, Jung-Hun Seo. 2022-02-22. Transient Characteristics of $\beta$-Ga$_2$O$_3$ Nanomembrane Schottky Barrier Diodes on Various Substrates. https://doi.org/10.1088/1361-6463%2Fac7f67

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