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arXiv · 2203.05865

Dangling bonds on the Cl- and Br-terminated Si(100) surfaces

T. V. Pavlova·V. M. Shevlyuga·B. V. Andryushechkin·K. N. Eltsov
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Abstract

Halogen monolayer on a silicon surface is attracting active attention for applications in electronic device fabrication with individual impurities. To create a halogen mask for the impurities incorporation, it is desirable to be able to remove a single halogen atom from the surface. We report the desorption of individual halogen atoms from the Si(100)-2x1-Cl and -Br surfaces in a scanning tunneling microscope (STM). Silicon dangling bonds (DBs) formed on the Si surface after halogen desorption were investigated using STM and the density functional theory. Three charge states: positive, neutral, and negative were identified. Our results show that the charge states of DBs can be manipulated, which will allow to locally tune the reactivity of the Cl- and Br-terminated Si(100) surfaces.

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T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin, K. N. Eltsov. 2022-03-11. Dangling bonds on the Cl- and Br-terminated Si(100) surfaces. https://doi.org/10.1016/j.apsusc.2022.153080

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