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arXiv · 2203.12172

Seebeck-driven transverse thermoelectric generation in on-chip devices

Weinan Zhou·Takamasa Hirai·Ken-ichi Uchida·Yuya Sakuraba
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Abstract

An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 $\mu$V K$^{-1}$ due to STTG in on-chip devices. We deposited polycrystalline Fe-Ga alloy films directly on n-type Si substrates, where Fe-Ga and Si serve as the magnetic and thermoelectric materials, respectively. Using microfabrication, contact holes were created through the SiO$_{x}$ layer at the top of Si to electrically connect the Fe-Ga film with the Si substrate. These thin devices with simple structure clearly exhibited enhancement of transverse thermopower due to STTG, and the obtained values agreed well with the estimation over a wide range of the size ratio between the Fe-Ga film and the Si substrate.

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Weinan Zhou, Takamasa Hirai, Ken-ichi Uchida, Yuya Sakuraba. 2022-03-23. Seebeck-driven transverse thermoelectric generation in on-chip devices. https://doi.org/10.1088/1361-6463/ac717a

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