Intrinsic Frequency Limit of Direct Modulation of Resonant-Tunneling-Diode Terahertz Emitters and Effect of External Feedback Injection

Masahiro Asada; Safumi Suzuki

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arXiv · 2204.00731

Intrinsic Frequency Limit of Direct Modulation of Resonant-Tunneling-Diode Terahertz Emitters and Effect of External Feedback Injection

Masahiro Asada·Safumi Suzuki

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Abstract

Output power of resonant-tunneling-diode (RTD) terahertz (THz) emitters can be modulated by the bias modulation similar to a semiconductor laser. This property is useful for applications of the THz waves to wireless communications and radars. In this paper, we theoretically analyze the modulation-frequency dependence of the output response using an equivalent circuit of the RTD-THz oscillator. It is shown that there exists an intrinsic cutoff frequency of modulation in RTD, which is independent of the external circuit that supplies the modulation signal to the oscillator. This cutoff frequency is determined by the time constant given by the capacitance of RTD divided by the absolute value of negative differential conductance minus loss conductance of the oscillator, and is about 100 GHz for typical RTD-THz oscillators. We also analyze the effect of external feedback injection on the modulation characteristics. If the period of the modulation frequency is equal to an integral multiple of the round-trip time of the feedback, a dip or peak occurs in the modulation response of the output, depending on whether the THz carrier components in the output and the feedback are in phase or out of phase. We also discuss the possibility of increase in cutoff frequency by the feedback with short round-trip time.

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Masahiro Asada, Safumi Suzuki. 2022-04-02. Intrinsic Frequency Limit of Direct Modulation of Resonant-Tunneling-Diode Terahertz Emitters and Effect of External Feedback Injection. https://arxiv.org/abs/2204.00731

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