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arXiv · 2204.01462

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Chen Jiang·Hao Liu·Jun Wang·Xiaomin Ren·Qi Wang·Zhuoliang Liu·Bojie Ma·Kai Liu·Ren Ren·Yidong Zhang·Shiwei Cai·Yongqing Huang
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Abstract

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers including four sets of five-period strained-layer superlattices and the laser-structural layers were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry-Perot ones with a stripe width of 21.5 um and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength is around 980 nm and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility.

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Chen Jiang, Hao Liu, Jun Wang, Xiaomin Ren, Qi Wang, Zhuoliang Liu, Bojie Ma, Kai Liu, Ren Ren, Yidong Zhang, Shiwei Cai, Yongqing Huang. 2022-04-04. Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001). https://doi.org/10.1063/5.0098264

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