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arXiv · 2204.01929

Optically Excited Two-Band Amplified Spontaneous Emission from a High-Current-Density Quantum-Dot LED

Namyoung Ahn·Young-Shin Park·Clément Livache·Jun Du·Victor I. Klimov
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Abstract

Laser diodes based on solution-processable materials could benefit numerous technologies including integrated electronics and photonics, telecommunication, and medical diagnostics. An attractive system for implementing these devices is colloidal semiconductor quantum dots (QDs). The primary challenge that hampered progress towards a QD laser diode (QLD) has been fast nonradiative Auger decay of optical-gain-active multicarrier states. Recently, this problem has been resolved by employing continuously graded QDs (cg-QDs) wherein Auger recombination is strongly suppressed. The use of these structures allowed for demonstrations of optical gain with electrical pumping and optically-excited lasing in multilayered LED-like devices. Here we report on achieving the next critical milestone towards a QLD, which is the demonstration of optically excited amplified spontaneous emission from a fully functional high-current density electroluminescent device. This advance has become possible due to excellent optical gain properties of novel 'compact' cg-QDs and a new LED architecture, which allows for concerted optimization of its optical and electrical properties. The results of this work strongly suggest the feasibility of the final step towards a functional QLD, which is the demonstration of lasing with electrical pumping.

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Namyoung Ahn, Young-Shin Park, Clément Livache, Jun Du, Victor I. Klimov. 2022-04-05. Optically Excited Two-Band Amplified Spontaneous Emission from a High-Current-Density Quantum-Dot LED. https://arxiv.org/abs/2204.01929

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