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arXiv · 2205.10394

Band Structure Driven Thermoelectric Response of Topological Semiconductor ZrTe$_5$

Junbo Zhu·Changmin Lee·Fahad Mahmood·Takehito Suzuki·Shiang Fang·Nuh Gedik·Joseph G. Checkelsky
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Abstract

We report a transport, thermodynamic, and spectroscopic study of the recently identified topological semiconductor ZrTe$_5$ with a focus on elucidating the connections between its band structure and unusual thermoelectric properties. Using time and angle resolved photoemission spectroscopy (tr-ARPES) we observe a small electronic band gap and temperature dependent Fermi level which traverses from a single valence to conduction band with lowering temperature, consistent with previous reports. This low temperature Fermi surface closely matches that derived from quantum oscillations, suggesting it is reflective of the bulk electronic structure. The Seebeck and low field Nernst response is characterized by an unusually large and non-monotonic temperature evolution. We find this can be quantitatively explained using a semiclassical model based on the observed band character and a linear temperature shifting of the Fermi level. Additionally, we observe a large, non-saturating enhancement of both thermoelectric coefficients in magnetic field. We show this can be captured by the Zeeman energy associated with a large effective $g$-factor of 25.8 consistent with that derived from Lifshitz-Kosevich analysis of the quantum oscillations. Together these observations provide a comprehensive picture of ZrTe$_{5}$ as a model high mobility semiconductor and potential platform for significant magnetic field driven thermoelectricity.

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Junbo Zhu, Changmin Lee, Fahad Mahmood, Takehito Suzuki, Shiang Fang, Nuh Gedik, Joseph G. Checkelsky. 2022-05-20. Band Structure Driven Thermoelectric Response of Topological Semiconductor ZrTe$_5$. https://doi.org/10.1103/physrevb.106.115105

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