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arXiv · 2206.13249

Resonant tunneling in graphene-ferroelectric-graphene junctions

David Koprivica·Eran Sela
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Abstract

We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking into account quantum capacitance effects. We predict a gate-sensitive FE voltage difference across the device, which can be measured using electrostatic force microscopy. Incorporating this electrostatic theory in the tunneling current-voltage characteristics, we identify a resonance peak associated with aligned Dirac cones as a highly sensitive probe of the FE polarization of the junction. This opens the way for device applications with few atom-thick FE layers acting as readable ultra-high-density memory.

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David Koprivica, Eran Sela. 2022-06-27. Resonant tunneling in graphene-ferroelectric-graphene junctions. https://doi.org/10.1103/physrevb.106.144110

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