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arXiv · 2207.05781

Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor

Tong Wu·Jing Guo
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Abstract

A multiscale simulation approach is developed to simulate the contact transport properties between semimetal to a monolayer two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor. The results elucidate the mechanisms for low contact resistance between semimetal and TMDC semiconductor contacts from a quantum transport perspective. The simulation results compare favorably with recent experiments. Furthermore, the results show that the contact resistance of a Bismuth-MoS2 contact can be further reduced by engineering the dielectric environment and doping the TMDC material to <100 ${\Omega}$.${\mu}$m. The quantum transport simulation indicates the possibility to achieve an ultrashort contact transfer length of ~1 nm, which can allow aggressive scaling of the contact size.

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Tong Wu, Jing Guo. 2022-07-12. Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor. https://doi.org/10.1063/5.0097213

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