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arXiv · 2207.08760

Theoretical study of small signal modulation behavior of Fabry-Perot Germanium-on-Silicon lasers

Ying Zhu·Liming Wang·Zhiqiang Li·Ruitao Wen·Guangrui Xia
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Abstract

This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority carrier lifetime were studied. A 3dB bandwidth of 33.94 GHz at a biasing current of 270.5 mA is predicted after Ge laser structure optimization with a defect limited carrier lifetime of 1 ns.

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Ying Zhu, Liming Wang, Zhiqiang Li, Ruitao Wen, Guangrui Xia. 2022-07-18. Theoretical study of small signal modulation behavior of Fabry-Perot Germanium-on-Silicon lasers. https://doi.org/10.1088/1402-4896%2Face93b

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