SearcharxivSearch

arXiv · 2207.12814

Automated Identification of Slip System Activity Fields from Digital Image Correlation Data

Abstract

Crystallographic slip system identification methods are widely employed to characterize the fine scale deformation of metals. While powerful, they usually rely on the occurrence of discrete slip bands with clear slip traces and can struggle when complex mechanisms such as cross-slip, curved slip, diffuse slip and/or intersecting slip occur. This paper proposes a novel slip system identification framework, termed SSLIP (for Slip Systems based Local Identification of Plasticity), in which the measured displacement gradient fields (from Digital Image Correlation) are locally matched to the kinematics of one or multiple combined theoretical slip systems, based on the measured crystal orientations. To identify the amounts of slip that conforms to the measured kinematics, an optimization problem is solved for every datapoint individually, resulting in a slip activity field for every considered slip system. The identification framework is demonstrated and validated on an HCP virtual experiment, for discrete and diffuse slip, incorporating 24 slip systems. Experimental case studies on FCC and BCC metals show how full-field identification of discrete slip, diffuse slip and cross-slip becomes feasible, even when considering 48 slip systems for BCC. Moreover, the methodology is extended into a dedicated cross-slip identification method, which directly yields the orientation of the local slip plane trace orientation, purely based on the measured kinematics and on one or two chosen slip directions. For even more challenging cases revealing a persistent uncertainty in the slip identification, a two-step identification approach can be employed, as is demonstrated on a highly challenging HCP virtual experiment.

Explore related subjects

Keep this discovery

BibTeXRIS

Tijmen Vermeij, Ron Peerlings, Marc Geers, Johan Hoefnagels. 2022-07-26. Automated Identification of Slip System Activity Fields from Digital Image Correlation Data. https://doi.org/10.1016/j.actamat.2022.118502

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci