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arXiv · 2208.08044

Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface

Wonho Song·Jung-Yong Lee·Junhyung Kim·Jinyoung Park·Jaehyeong Jo·Eunseok Hyun·Jiwan Kim·Daejin Eom·Gahyun Choi·Kibog Park
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Abstract

The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO$_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO$_2$ interface. We also provide the device-physical analysis of solving Poisson equation when the flat-band voltage is applied to the junction, supporting that the wide tuning of Al effective work-function originates from the electrical dipole layer formed by the overlap of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer.

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Wonho Song, Jung-Yong Lee, Junhyung Kim, Jinyoung Park, Jaehyeong Jo, Eunseok Hyun, Jiwan Kim, Daejin Eom, Gahyun Choi, Kibog Park. 2022-08-17. Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface. https://doi.org/10.1002/aelm.202400139

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