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arXiv · 2208.09181

High-performance Pockels-effect modulation and switching in silicon-based GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge superlattice-on-insulator integrated circuits

Francesco De Leonardis·Richard Soref
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Abstract

We propose new Si-based waveguided Superlattice on Insulator (SLOI) platforms for high-performance electro-optical (EO) 2 x 2 and N x M switching and 1 x 1 modulation; including broad spectrum and resonant. We present a theoretical investigation, based on the tight-binding Hamiltonian, of the Pockels EO effect in the lattice-matched undoped GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge wafer-scale short-period superlattices that are etched into waveguided networks of small-footprint Mach-Zehnder interferometers and micro-ring resonators to yield opto-electronic chips.

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Francesco De Leonardis, Richard Soref. 2022-08-19. High-performance Pockels-effect modulation and switching in silicon-based GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge superlattice-on-insulator integrated circuits. https://arxiv.org/abs/2208.09181

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